Title :
InGaAs pin photodiodes grown by liquid-phase epitaxy using erbium gettering
Author :
Ho, W.-J. ; Wu, Meng-Chyi ; Lin, Y.M. ; Tu, Y.-K.
Author_Institution :
Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
1/6/1994 12:00:00 AM
Abstract :
A new InGaAs pin photodiode employing the donor-gettering source Er into the InGaAs growth solution to obtain a low carrier concentration by liquid-phase epitaxy has been fabricated for the first time. The devices with and without antireflection coating exhibit the photoresponsivity of, respectively, 0.7 and 1.0 A/W at 1.6μm at zero bias
Keywords :
III-V semiconductors; antireflection coatings; erbium; gallium arsenide; getters; indium compounds; liquid phase epitaxial growth; p-i-n photodiodes; semiconductor growth; 1.6 micron; Er; Er gettering; InGaAs; PIN photodiodes; antireflection coating; donor-gettering source; growth solution; liquid-phase epitaxy; low carrier concentration; photoresponsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940024
