DocumentCode :
1021636
Title :
Anisotropic electron cyclotron resonance etching of tungsten films on GaAs
Author :
Shul, R.J. ; Rieger, D.J. ; Baca, A.G. ; Constantine, C. ; Barratt, C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
30
Issue :
1
fYear :
1994
fDate :
1/6/1994 12:00:00 AM
Firstpage :
84
Lastpage :
85
Abstract :
Anisotropic etching of tungsten submicrometre features has been achieved with an electron-cyclotron-resonance-generated SF6/Ar plasma. The process is suitable for W Schottky gates for highspeed, high-power GaAs transistors. Tungsten gate sidewall profiles are evaluated as a function of RF bias
Keywords :
Schottky gate field effect transistors; electrical contacts; gallium arsenide; metallic thin films; metallisation; semiconductor technology; sputter etching; tungsten; Ar; RF bias; SF6; SF6-Ar; SF6/Ar plasma; W; W Schottky gates; W gate sidewall profiles; W-GaAs; anisotropic etching; electron cyclotron resonance etching; high-power GaAs transistors; high-speed devices; submicrometre features;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940006
Filename :
260619
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1021636
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