Title :
High-performance buried-gate MOSFETs with RTO-grown ultrathin gate oxide films
Author :
Ochiai, Toshihiko ; Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo
fDate :
1/6/1994 12:00:00 AM
Abstract :
The authors propose a novel buried-gate-type MOSFET (BG-MOSFET) with ultrathin gate oxide films formed by rapid thermal oxidation (RTO) technology. The BG-MOSFET fabricated showed good punchthrough characteristics and much smaller hot-carrier degradation. The optimum trench depth is ~0.1-0.2μm deeper than source/drain junction depth considering current gain, avalanche breakdown voltage and hot-carrier immunity
Keywords :
hot carriers; impact ionisation; insulated gate field effect transistors; oxidation; rapid thermal processing; RTO-grown films; avalanche breakdown voltage; buried-gate MOSFETs; current gain; hot-carrier degradation; hot-carrier immunity; optimum trench depth; punchthrough characteristics; rapid thermal oxidation; ultrathin gate oxide films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940031
