Title :
Low temperature thermal cleaning of GaSb surface and fabrication of near ideal Au-GaSb Schottky diode
Author_Institution :
Semicond.. Technol. Study Group, Tokyo
fDate :
1/6/1994 12:00:00 AM
Abstract :
In this experiment, near ideal gold contact GaSb Schottky diodes were made by chemical etching and vacuum evaporation techniques. Good rectification characteristics better than those reported in several previous studies were obtained. The diode manufacturing method that achieved the above results is based on a technique employing low temperature thermal cleaning of the GaSb surface by oxide etch-off, chemical etching and subsequent thermal treatment at 250°C
Keywords :
III-V semiconductors; Schottky effect; Schottky-barrier diodes; X-ray photoelectron spectra; etching; gallium compounds; gold; heat treatment; rectification; reflection high energy electron diffraction; surface treatment; 250 C; Au-GaSb; Au-GaSb Schottky diode; GaSb; GaSb surface; I-V characteristics; RHEED patterns; XPS spectra; chemical etching; diode manufacturing method; low temperature thermal cleaning; near ideal characteristics; oxide etch-off; rectification characteristics; thermal treatment; vacuum evaporation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940044
