Low temperature thermal cleaning of GaSb surface and fabrication of near ideal Au-GaSb Schottky diode

Author

Kodama, MIturu

Author_Institution

Semicond.. Technol. Study Group, Tokyo

Volume

30

Issue

1

fYear

1994

fDate

1/6/1994 12:00:00 AM

Firstpage

89

Lastpage

90

Abstract

In this experiment, near ideal gold contact GaSb Schottky diodes were made by chemical etching and vacuum evaporation techniques. Good rectification characteristics better than those reported in several previous studies were obtained. The diode manufacturing method that achieved the above results is based on a technique employing low temperature thermal cleaning of the GaSb surface by oxide etch-off, chemical etching and subsequent thermal treatment at 250°C

Keywords

III-V semiconductors; Schottky effect; Schottky-barrier diodes; X-ray photoelectron spectra; etching; gallium compounds; gold; heat treatment; rectification; reflection high energy electron diffraction; surface treatment; 250 C; Au-GaSb; Au-GaSb Schottky diode; GaSb; GaSb surface; I-V characteristics; RHEED patterns; XPS spectra; chemical etching; diode manufacturing method; low temperature thermal cleaning; near ideal characteristics; oxide etch-off; rectification characteristics; thermal treatment; vacuum evaporation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940044

Filename

260622