DocumentCode
1021843
Title
Reliable 1.3 mu m gain guided stripe lasers grown by MOCVD using ethyldimethylindium as the In source
Author
Blaauw, C. ; Devenyi, T.F. ; Capron, B. ; Shepherd, F.R. ; SpringThorpe, A.J.
Author_Institution
Bell-Northern Res. Ltd., Ottawa, Ont., Canada
Volume
26
Issue
16
fYear
1990
Firstpage
1291
Lastpage
1293
Abstract
The first semiconductor laser in the GaInAsP materials system grown by MOCVD using ethyldimethylindium as the In source is reported. A 1.3 mu m gain guided stripe laser structure with 5 mu m wide stripes was fabricated. The devices showed excellent reliability, with negligible degradation measured during life testing at 50 degrees C and 60 degrees C over a period of 16000 h.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; reliability; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 16000 h; 5 micron; 50 C; 60 C; GaInAsP; MOCVD; ethyldimethylindium; gain guided stripe lasers; life testing; negligible degradation; reliability; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900831
Filename
130941
Link To Document