DocumentCode
1021877
Title
Monte Carlo particle simulation of the hole-electron plasma formed in a p-n junction
Author
Moglestue, C.
Author_Institution
GEC Research Ltd., Hirst Research Centre, Wembley, UK
Volume
22
Issue
7
fYear
1986
Firstpage
397
Lastpage
398
Abstract
The current through a forward-biased p-n junction in GaAs has been simulated. It was found that a stationary plasma accumulates on both sides of the junction, which peaks at the n-type side of the junction.
Keywords
III-V semiconductors; Monte Carlo methods; gallium arsenide; p-n homojunctions; solid-state plasma; GaAs; III-V semiconductors; Monte Carlo particle simulation; forward-biased junction; hole-electron plasma; p- n junction; solid-state plasma; stationary plasma;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860270
Filename
4256462
Link To Document