Title :
Monte Carlo particle simulation of the hole-electron plasma formed in a p-n junction
Author_Institution :
GEC Research Ltd., Hirst Research Centre, Wembley, UK
Abstract :
The current through a forward-biased p-n junction in GaAs has been simulated. It was found that a stationary plasma accumulates on both sides of the junction, which peaks at the n-type side of the junction.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; p-n homojunctions; solid-state plasma; GaAs; III-V semiconductors; Monte Carlo particle simulation; forward-biased junction; hole-electron plasma; p- n junction; solid-state plasma; stationary plasma;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860270
