Title :
Transient effect in thinned silicon-on-insulator devices
Author_Institution :
CNET-CNS-BP 98, Meylan, France
Abstract :
In thin-film silicon-on-insulator devices, electrostatic coupling between the two Si-SiO2 interfaces gives rise to transient drain-source current. This effect should be considered in devising three-dimensional circuits.
Keywords :
insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; transients; IC technology; MOSFET; Si-SiO2 interfaces; electrostatic coupling; thin film SOI devices; three-dimensional circuits; transient drain-source current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860281
