DocumentCode :
1022012
Title :
Evaluation of the DC parameters and noise transport in the gun region of an injected-beam crossed-field diode
Author :
Wadhwa, R.P. ; Rowe, J.E.
Author_Institution :
The University of Michigan, Ann Arbor, Mich.
Volume :
11
Issue :
4
fYear :
1964
fDate :
4/1/1964 12:00:00 AM
Firstpage :
170
Lastpage :
180
Abstract :
A half-Maxwellian y -component velocity distribution and a full-Maxwellian z -component velocity distribution are assumed in order to evaluate the position and depth, ymand Vm, of the potential minimum as a boundary-value problem. The various dc parameters such as the voltage distribution, space-charge density, velocity and current density components and trajectories are then evaluated as an initial-value problem. The results obtained in this manner agree closely with the results obtained from the Kino gun model except that the y -component current density is not constant, as is usually assumed in the Kino gun model. The steady-state parameters are calculated here for both temperature-limited and space-charge-llmited conditions. The Kino gun results are shown to be essentially those for space-charge-limited operation. Even though the injection conditions under the two types of operation are identical, the formation of a potential minimum considerably changes the electron trajectories and the corresponding velocity components. The growth rate of a hybrid wave is reduced as ωpis decreased and/or \\omega /\\omega _{c} is increased, and the propagation constants of the two conventional space-charge waves are modified, the over-all growth rate of the slow wave being greater than that of the fast wave. For large values of ωpthe conventional fast space-charge wave is a backward wave, although it becomes a forward wave if \\omega /\\omega _{c} is large. It is noticed that the conditions in the gun region are more favorable to the existence of low-frequency perturbations. Based upon these results several experimental observations made at various laboratories are explained qualitatively.
Keywords :
Current density; Diodes; Electrons; Fluctuations; Low-frequency noise; Noise generators; Noise level; Steady-state; Virtual manufacturing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15307
Filename :
1473695
Link To Document :
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