• DocumentCode
    1022012
  • Title

    Evaluation of the DC parameters and noise transport in the gun region of an injected-beam crossed-field diode

  • Author

    Wadhwa, R.P. ; Rowe, J.E.

  • Author_Institution
    The University of Michigan, Ann Arbor, Mich.
  • Volume
    11
  • Issue
    4
  • fYear
    1964
  • fDate
    4/1/1964 12:00:00 AM
  • Firstpage
    170
  • Lastpage
    180
  • Abstract
    A half-Maxwellian y -component velocity distribution and a full-Maxwellian z -component velocity distribution are assumed in order to evaluate the position and depth, ymand Vm, of the potential minimum as a boundary-value problem. The various dc parameters such as the voltage distribution, space-charge density, velocity and current density components and trajectories are then evaluated as an initial-value problem. The results obtained in this manner agree closely with the results obtained from the Kino gun model except that the y -component current density is not constant, as is usually assumed in the Kino gun model. The steady-state parameters are calculated here for both temperature-limited and space-charge-llmited conditions. The Kino gun results are shown to be essentially those for space-charge-limited operation. Even though the injection conditions under the two types of operation are identical, the formation of a potential minimum considerably changes the electron trajectories and the corresponding velocity components. The growth rate of a hybrid wave is reduced as ωpis decreased and/or \\omega /\\omega _{c} is increased, and the propagation constants of the two conventional space-charge waves are modified, the over-all growth rate of the slow wave being greater than that of the fast wave. For large values of ωpthe conventional fast space-charge wave is a backward wave, although it becomes a forward wave if \\omega /\\omega _{c} is large. It is noticed that the conditions in the gun region are more favorable to the existence of low-frequency perturbations. Based upon these results several experimental observations made at various laboratories are explained qualitatively.
  • Keywords
    Current density; Diodes; Electrons; Fluctuations; Low-frequency noise; Noise generators; Noise level; Steady-state; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1964.15307
  • Filename
    1473695