Title :
Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation
Author :
Oshiba, Saeko ; Matoba, Akihisa ; Horikawa, H. ; Kawai, Yusuke ; Sakuta, M.
Author_Institution :
Oki Electric Industry Co. Ltd., Research Laboratory, Hachioji, Japan
Abstract :
Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7×104 h at 75% of the maximum CW output power.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; reliability; semiconductor junction lasers; CW output powers; GaInAsP-InP laser; V-grooved inner-stripe laser diodes; ageing test; high-power operation; median lifetime; reliability; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860292
