DocumentCode
1022176
Title
Al-SiO2-Al sandwich microstrip lines for high-frequency on-chip interconnects
Author
Gondermann, Jörg ; Von Kamienski, Elard G Stein ; Roskos, Hartmut G. ; Kurz, Heinrich
Author_Institution
Inst. fuer Halbleitertech., Rheinisch-Westfalisches Tech. Hochschule, Aachen, Germany
Volume
41
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2087
Lastpage
2091
Abstract
A downscaled 2-μm-wide microstrip line fabricated with both signal and ground conductors on top of the substrate is presented. A significantly reduced geometric dispersion for a roughly 400-GHz bandwidth pulse was measured on this waveguide, using the time-resolved electrooptic sampling technique. The mode of the electromagnetic signal is strongly confined, promising reduced crosstalk between densely packed interconnects
Keywords
MMIC; aluminium; crosstalk; dispersion (wave); high-frequency transmission lines; metal-insulator-metal devices; microstrip lines; silicon compounds; 2 mum; 400 GHz; 400-GHz bandwidth pulse; Al-SiO2-Al; Al-SiO2-Al sandwich microstrip lines; MM-wave ICs; Si; Si substrate; confined field distribution; crosstalk; densely packed interconnects; electromagnetic signal mode confinement; geometric dispersion; ground conductors; high-frequency on-chip interconnects; signal conductors; time-resolved electrooptic sampling technique; Bandwidth; Conductors; Crosstalk; Dispersion; Electromagnetic measurements; Electromagnetic waveguides; Electrooptical waveguides; Microstrip; Pulse measurements; Sampling methods;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.260691
Filename
260691
Link To Document