Title :
Avalanche GaAlAs/GaAs heterojunction phototransistor with optoelectronic bistability
Author :
Huang Xiaokang ; Wang Zuning ; Sun Baoyin
Author_Institution :
Tsinghua University, Department of Radio Electronics, Beijing, China
Abstract :
Optoelectronic bistability in an avalanche GaAlAs/GaAs HPT which operates in the negative resistance region is reported for the first time. Theoretical and experimental results are presented. This device can be used in regulation, differential amplification and optical memory signals.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; optical bistability; phototransistors; GaAlAs-GaAs avalanche heterojunction phototransistor; differential amplification; negative resistance region; optical memory signals; optoelectronic bistability; regulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860297
