Title :
Surface-emitting GaAlAs/GaAs laser with etched mirrors
Author :
Yang, Jie J. ; Jansen, Maarten ; Sergant, M.
Author_Institution :
TRW, Space & Technology Group, Redondo Beach, USA
Abstract :
A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45° mirror.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; mirrors; semiconductor junction lasers; GaAlAs-GaAs surface emitting laser; etched mirrors; integrated optics; ion milling; output light deflection; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860299