DocumentCode :
1022201
Title :
Surface-emitting GaAlAs/GaAs laser with etched mirrors
Author :
Yang, Jie J. ; Jansen, Maarten ; Sergant, M.
Author_Institution :
TRW, Space & Technology Group, Redondo Beach, USA
Volume :
22
Issue :
8
fYear :
1986
Firstpage :
438
Lastpage :
439
Abstract :
A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45° mirror.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; mirrors; semiconductor junction lasers; GaAlAs-GaAs surface emitting laser; etched mirrors; integrated optics; ion milling; output light deflection; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860299
Filename :
4256492
Link To Document :
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