Title :
Design calculations for MOS field effect transistors
Author :
Root, C.D. ; Vadasz, L.
Author_Institution :
Raytheon Co., Sudbury, Mass.
fDate :
6/1/1964 12:00:00 AM
Abstract :
Design equations for the Metal-Oxide-Semiconductor Field Effect Transistor are developed. Approximate solutions for static characteristics, transconductance, and frequency cutoff are presented for the case of a very high resistivity substrate. Specific sets of static characteristics from computer calculations are presented graphically to illustrate the effects of oxide thickness and various substrate resistivities.
Keywords :
Conductivity; Cutoff frequency; Electron mobility; Equations; FETs; Helium; MOS devices; Substrates; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15327
