• DocumentCode
    1022204
  • Title

    Design calculations for MOS field effect transistors

  • Author

    Root, C.D. ; Vadasz, L.

  • Author_Institution
    Raytheon Co., Sudbury, Mass.
  • Volume
    11
  • Issue
    6
  • fYear
    1964
  • fDate
    6/1/1964 12:00:00 AM
  • Firstpage
    294
  • Lastpage
    299
  • Abstract
    Design equations for the Metal-Oxide-Semiconductor Field Effect Transistor are developed. Approximate solutions for static characteristics, transconductance, and frequency cutoff are presented for the case of a very high resistivity substrate. Specific sets of static characteristics from computer calculations are presented graphically to illustrate the effects of oxide thickness and various substrate resistivities.
  • Keywords
    Conductivity; Cutoff frequency; Electron mobility; Equations; FETs; Helium; MOS devices; Substrates; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1964.15327
  • Filename
    1473715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022204