High-Q microwave acoustic resonators and filters

Author

Lakin, Kenneth M. ; Kline, Gerald R. ; McCarron, Kevin T.

Author_Institution

TFR Technol. Inc., Redmond, OR, USA

Volume

41

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2139

Lastpage

2146

Abstract

The authors present recent experimental and modeling results for high-Q microwave acoustic resonators and filters for use in oscillators and other frequency control applications. Overmoded resonators have exhibited an FQ product greater than 1×10¹⁴ Hz (e.g., Q=68,000 at 1.6 GHz) with a strong inductive response suitable for one-port and two-port oscillator feedback circuits. Ladder filters fabricated with overmoded resonators have loaded Qs greater than 40,000 with 76-kHz bandwidth at 1.6 GHz. Aluminum nitride films were used for transduction on Z-cut sapphire and lithium niobate substrates

Keywords

Q-factor; acoustic microwave devices; aluminium compounds; crystal resonators; equivalent circuits; ladder networks; lithium compounds; microwave filters; passive filters; sapphire; solid-state microwave devices; thin film devices; 1.6 GHz; 76 kHz; Al₂O₃; AlN films; AlN-Al₂O₃; AlN-LiNbO₃; LiNbO₃; UHF; Z-cut LiNbO₃ substrates; Z-cut sapphire substrates; frequency control applications; high-Q devices; inductive response; ladder filters; microwave acoustic resonators; modeling; oscillator applications; oscillator feedback circuits; overmoded resonators; Bandwidth; Delay lines; Electrodes; Microwave devices; Microwave filters; Microwave oscillators; Phase noise; Piezoelectric films; Resonator filters; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.260698

Filename

260698