Title :
Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique
Author :
Schimpe, R. ; Bowers, J.E. ; Koch, T.L.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1.5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.
Keywords :
III-V semiconductors; characteristics measurement; demodulation; distributed feedback lasers; frequency modulation; gallium arsenide; indium compounds; infrared detectors; optical modulation; photodiodes; semiconductor device testing; semiconductor junction lasers; spectral analysis; 20 GHz detector bandwidth; 3 mW laser output power per facet; FM index intensity modulation index ratio; InGaAs PIN photodiode; InGaAsP DFB laser diode; InGaAsP vapour-phase-transported DFB laser diode; frequency modulation; frequency response; intensity modulation; laser radiation beat frequency; laser wavelength 1.5 micron; microwave modulation; modulation frequency range 100 MHz to 2 GHz; optical heterodyne measurement technique; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860308
