• DocumentCode
    1022328
  • Title

    1.54 mu m electroluminescence in MeV ion implanted Er-doped GaAs

  • Author

    Klein, P.B. ; Moore, F.G. ; Dietrich, H.B.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    26
  • Issue
    16
  • fYear
    1990
  • Firstpage
    1299
  • Lastpage
    1300
  • Abstract
    Er3+ electroluminescence at 1.54 mu m has been observed from p-n junction diodes fabricated from approximately=1 mu m Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( eta approximately=10-6) are believed to be related to the small fraction of the implanted Er in the Er3+ state.
  • Keywords
    III-V semiconductors; electroluminescence; erbium; gallium arsenide; ion implantation; light emitting diodes; 1.54 micron; GaAs:Er 3+; LED; MeV ion implanted; electroluminescence; high energy ion implantation; implantation profile; p-n junction diodes; p-type converted n-type material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900835
  • Filename
    130945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022328