Title :
Dynamic intensity noise and related gain compression phenomena for a GaAlAs BH laser
Author :
Way, W.I. ; Liu, P.L.
Author_Institution :
Bell Communications Research, Red Bank, USA
Abstract :
The frequency distribution of relative intensity noise for a GaAlAs BH laser diode is changed significantly by radio frequency carriers above 10 MHz and -5dBm. indicating that gain compression has occurred. For an optical transmission system with multiple inputs, weak RF carriers may be severely suppressed in the presence of other strong RF carriers owing to the gain compression effect.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; optical modulation; semiconductor junction lasers; GaAlAs BH laser diode; RF carriers; RF modulation; dynamic intensity noise; frequency distribution of relative intensity noise; gain compression phenomena; laser modulation; microwave bandwidth; microwave modulation; optical transmission system with multiple inputs; radio frequency carriers; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860311
