• DocumentCode
    1022338
  • Title

    Dynamic intensity noise and related gain compression phenomena for a GaAlAs BH laser

  • Author

    Way, W.I. ; Liu, P.L.

  • Author_Institution
    Bell Communications Research, Red Bank, USA
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • Firstpage
    457
  • Lastpage
    459
  • Abstract
    The frequency distribution of relative intensity noise for a GaAlAs BH laser diode is changed significantly by radio frequency carriers above 10 MHz and -5dBm. indicating that gain compression has occurred. For an optical transmission system with multiple inputs, weak RF carriers may be severely suppressed in the presence of other strong RF carriers owing to the gain compression effect.
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; optical modulation; semiconductor junction lasers; GaAlAs BH laser diode; RF carriers; RF modulation; dynamic intensity noise; frequency distribution of relative intensity noise; gain compression phenomena; laser modulation; microwave bandwidth; microwave modulation; optical transmission system with multiple inputs; radio frequency carriers; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860311
  • Filename
    4256505