V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT´s

Author

Matloubian, Mehran ; Jelloian, Linda M. ; Brown, April S. ; Nguyen, Loi D. ; Larson, Lawrence E. ; Delaney, M.J. ; Thompson, Mark A. ; Rhodes, R.A. ; Pence, J.E.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

41

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2206

Lastpage

2210

Abstract

The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448-μm-wide HEMT with a gate length of 0.15 μm, an output power of 155 mW with a 4.9-dB gain and a power-added efficiency of 30.1% were obtained. By power-combining two of these HEMTs, an output power of 288 mW with 3.6-dB gain and a power-added efficiency of 20.4% were achieved. This is the highest output power reported with such a high efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 145 to 288 mW; 20.4 to 30 percent; 3.6 to 4.9 dB; 59 GHz; AlInAs-GaInAs-InP; EHF; MM-wave devices; V-band; high electron mobility transistors; high-efficiency devices; high-power HEMTs; Atomic layer deposition; Current density; Electrons; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Power generation; Schottky barriers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.260707

Filename

260707