DocumentCode
1022379
Title
High-power and high-efficiency phased array lasers grown by a two-step metalorganic chemical vapour deposition
Author
Welch, D.F. ; Cross, P.S. ; Scifres, D.R. ; Harnagel, G. ; Cardinal, M. ; Streifer, W. ; Burnham, R.D.
Author_Institution
Spectra Diode Laboratories, San Jose, USA
Volume
22
Issue
9
fYear
1986
Firstpage
464
Lastpage
466
Abstract
Phased array lasers which emit 1.3 W CW output were fabricated using a two-step metalorganic chemical vapour deposition process were developed. The differential efliciency at 100 mW is 78% and the total efficiency at the catastrophic limit is 39%.
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; 1.3 W CW output; GaAs/GaAlAs lasers; MOCVD; catastrophic limit; differential efficiency; efficiency; high power phased array lasers; high-efficiency; semiconductors; two-step metalorganic chemical vapour deposition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860316
Filename
4256510
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