• DocumentCode
    1022519
  • Title

    Dry etching characteristics of LiNbO3

  • Author

    Chung, Pil Seung ; Horwitz, C.M. ; Guo, W.L.

  • Author_Institution
    Chinese University of Hong Kong, Deportment of Electronics, Shatin, Hong Kong
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • Firstpage
    484
  • Lastpage
    485
  • Abstract
    We report a high etch selectivity of LiNbO3 with respect to Cr of 10:1 using the planar sputter etching technique in CF4 plasma. The etch rate can be further increased by an order of magnitude using an enhanced-discharge hollow-cathode sputter etching system.
  • Keywords
    lithium compounds; optical materials; optical workshop techniques; sputter etching; Al mask; CF4 plasma; Cr mask; LiNbO3; dry etching characteristics; enhanced-discharge etching system; high etch selectivity; hollow-cathode; integrated optics; optical workshop techniques; planar sputter etching technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860329
  • Filename
    4256523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022519