DocumentCode
1022528
Title
High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
Author
Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K. ; Jewell, J.L. ; Leibenguth, R.E. ; Asom, M.T. ; Livescu, Gabriela ; Luther, L. ; Mattera, V.D.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
26
Issue
16
fYear
1990
Firstpage
1308
Lastpage
1310
Abstract
Highly efficient (1.2 mW/mA, >70% CW differential quantum efficiency), top-surface-emitting, vertical cavity lasers are achieved at room temperature. Buried damage layers by proton implantation are used for efficient current funnelling. The CW threshold currents are 3.5-8.0 mA, at 3.7-4.2 V bias, for 10-30 mu m diameter lasers. The lasing wavelengths are 845-848 nm.
Keywords
III-V semiconductors; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 10 to 30 micron; 3.5 to 8 mA; 3.7 to 4.2 V; 70 percent; 845 to 848 nm; CW operation; CW threshold currents; GaAs quantum well lasers; current funnelling; diameter; high efficiency lasers; lasing wavelengths; proton implantation; room temperature; semiconductors; top-surface-emitting; vertical cavity lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900841
Filename
130951
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