DocumentCode :
1022555
Title :
Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes
Author :
Allam, J. ; Adams, A.R.
Volume :
26
Issue :
16
fYear :
1990
Firstpage :
1311
Lastpage :
1313
Abstract :
The enhancement of the electron ionisation rate in multiple quantum well avalanche photodiodes is determined by the band offsets in the satellite valleys rather than the Gamma valley as previously assumed for semiconductors where the threshold field for the Gunn effect is less than that for impact ionisation. Monte Carlo calculations in a model GaAs/Al0.45Ga0.55As heterostructure show no enhancement caused by the band offsets.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; gallium arsenide; semiconductor quantum wells; APD; GaAs-Al 0.45Ga 0.55As; Gunn effect threshold field; Monte Carlo calculations; band offsets; electron ionisation rate; impact ionisation threshold field; ionisation rate enhancement; multiple quantum well avalanche photodiodes; satellite valleys role; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900843
Filename :
130953
Link To Document :
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