Title :
Closed-tube diffusion of silicon in GaAs from sputtered silicon film
Author :
Omura, E. ; Wu, X.S. ; Vawter, G. Allen ; Coldren, Larry ; Hu, E. ; Merz, J.L.
Author_Institution :
University of California, Department of Electrical & Computer Engineering, Santo Barbara, USA
Abstract :
Silicon diffusion into GaAs from a sputtered film in a closed ampoule is described. Excess arsenic pressure is required in the ampoule for a successful diffusion. The relationship between junction depth and the diffusion coefficient has been theoretically derived and the activation energy of the Si-Si pair diffusion coefficient has been obtained from that relation.
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; semiconductor doping; silicon; GaAs; GaAs:Si; III-V semiconductor; Si sputtered film; Si-Si pair diffusion coefficient; closed-tube diffusion; diffusion coefficient; junction depth; semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860337
