Title :
High-speed response characteristics of GaAs optoelectronic integrated receivers
Author :
Hamaguchi, Hiroki ; Makiuchi, M. ; Wada, O.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
The letter focuses on the measurement of pulse response characteristics of an optoelectronic integrated receiver in which a GaAs metal-semiconductor-metal (MSM) photodiode and a GaAs field-effect transistor amplifier are monolithically integrated on a GaAs substrate. The maximum parasitic capacitance was found to be negligible for the total capacitance at the amplifier input. We also verified a fast response of this receiver showing a rise time of 300 ps.
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; receivers; FET amplifier; GaAs substrate; III-V semiconductors; MSM photodiode; field-effect transistor; high-speed response; maximum parasitic capacitance; measurement; metal-semiconductor-metal; monolithic IC; optical communication equipment; optoelectronic integrated receivers; pulse response characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860340
