Title :
Ka-band monolithic gain control amplifier
Author :
Geddes, J. ; Sokolov, V. ; Contolatis, T.
Author_Institution :
Honeywell Inc., Science & Technology, Bloomington, USA
Abstract :
A monolithic gain control amplifier for Ka-band has been developed based on 0.25 ¿m-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
Keywords :
field effect integrated circuits; gain control; microwave amplifiers; microwave integrated circuits; 31 GHz; GaAs; IC design; Ka-band; MMIC; dual-gate FETs; fabrication; gain control; ion-implanted material; microwave amplifiers; monolithic amplifier; satellite receivers; single-stage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860341
