DocumentCode
1022644
Title
Ka-band monolithic gain control amplifier
Author
Geddes, J. ; Sokolov, V. ; Contolatis, T.
Author_Institution
Honeywell Inc., Science & Technology, Bloomington, USA
Volume
22
Issue
9
fYear
1986
Firstpage
503
Lastpage
504
Abstract
A monolithic gain control amplifier for Ka-band has been developed based on 0.25 ¿m-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
Keywords
field effect integrated circuits; gain control; microwave amplifiers; microwave integrated circuits; 31 GHz; GaAs; IC design; Ka-band; MMIC; dual-gate FETs; fabrication; gain control; ion-implanted material; microwave amplifiers; monolithic amplifier; satellite receivers; single-stage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860341
Filename
4256535
Link To Document