Monolithic FET structures for high-power control component applications

Author

Shifrin, Mitchell B. ; Katzin, Peter J. ; Ayasli, Yalcin

Author_Institution

Hittite Microwave Corp., Woburn, MA, USA

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2134

Lastpage

2141

Abstract

A monolithic FET switch is described that can be integrated with other monolithic functions or used as a discrete component in a microwave integrated circuit structure. This device increases the power-handling capability of the conventional single FET switch by an order of magnitude. It does this by overcoming the breakdown voltage limitation of the FET device. The design, fabrication and performance of two high-power control components using these circuits are described as examples of the implementation of this technology. They are an L-band terminated single-pole, single-throw (SPST) switch and an L-band limiter

Keywords

MMIC; power integrated circuits; semiconductor switches; L; L-band; MMIC; SPST switch; bias network; breakdown voltage limitation; fabrication; high-power control component; limiter; microwave integrated circuit structure; monolithic FET switch; power-handling capability; single-pole; single-throw; terminated switch; FET integrated circuits; Fabrication; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Switches; Switching circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44132

Filename

44132