Title :
Improved molecular beam epitaxial growth of InP using solid sources
Author :
Roberts, Jeffrey S. ; Claxton, P.A. ; David, J.P.R. ; Marsh, John H.
Author_Institution :
University of Sheffield, SERC Central Facility for III-V Semiconductors Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ~50000 cm2V¿1s¿1 were grown using a phosphorus source vacuum-packed at manufacture.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; III-V semiconductors; InP; graphite cracking zone; molecular beam epitaxial growth; slice temperature; solid sources; vacuum-packed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860345
