DocumentCode :
1022690
Title :
A monolithic 60 GHz diode mixer and IF amplifier in compatible technology
Author :
Adelseck, Bernd ; Colquhoun, Alexander ; Dieudonné, Jean-Marie ; Ebert, Günther ; Schmegner, Karl-Ernst ; Schwab, Wolfgang ; Selders, Johannes
Author_Institution :
Telefunken Systemtech., Ulm, West Germany
Volume :
37
Issue :
12
fYear :
1989
fDate :
12/1/1989 12:00:00 AM
Firstpage :
2142
Lastpage :
2147
Abstract :
A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency fT of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f max up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz
Keywords :
MMIC; Schottky gate field effect transistors; Schottky-barrier diodes; intermediate-frequency amplifiers; microwave amplifiers; mixers (circuits); 1.7 dB; 20.6 dB; 3.3 dB; 6 dB; 60 GHz; EHF; IF amplifier; MESFETs; MIMIC; MM-wave circuits; compatible technology; conversion loss; diode mixer; millimeter-wave Schottky diodes; monolithic integration; Circuits; Fabrication; Frequency; Gallium arsenide; MESFETs; MMICs; Millimeter wave technology; Noise figure; Rapid thermal annealing; Schottky diodes;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.44133
Filename :
44133
Link To Document :
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