• DocumentCode
    1022705
  • Title

    X-band 0.5, 1, and 2 watt power amplifiers with marked improvement in power-added efficiency

  • Author

    Boesch, Ronald D. ; Thompson, Joyce A.

  • Author_Institution
    Watkins-Johnson Co., Palo Alto, CA, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    707
  • Lastpage
    711
  • Abstract
    Very efficient X-band MESFET power amplifiers, showing greater power-added efficiency over a wider bandwidth than any X-band amplifiers of comparable output reported to date, are discussed. The amplifiers were designed with attention given to optimum bias, proper harmonic termination, and efficient power combining. These device and design issues are discussed, and a straightforward design method which achieved the increased levels of efficiency is described
  • Keywords
    Schottky gate field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 0.5 to 2 W; MESFET; X-band; design method; harmonic termination; optimum bias; power amplifiers; power combining; power-added efficiency; Bandwidth; Gallium arsenide; Impedance matching; MESFETs; MMICs; Optical amplifiers; Power amplifiers; Power generation; Power measurement; Power system harmonics;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.130964
  • Filename
    130964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022705