Title :
Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz
Author :
Hughes, W.A. ; Parker, D.G.
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Abstract :
A hybrid photoreceiver based on an ITO/GaAs photodiode integrated with a 0.5 ¿m gate length high electron mobility transistor (HEMT) is reported. The receiver gave an 8 dB associated gain at 10 GHz compared with a discrete detector.
Keywords :
high electron mobility transistors; photodetectors; photodiodes; 10 GHz; ITO/GaAs; gain; high electron mobility transistor; high-frequency photodiode-HEMT hybrid photoreceiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860347
