مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1022712

Title :

Gunn effect in GaAs

Author :

Foyt, A.G. ; McWhorter, A.L.

Volume :

Issue :

fYear :

1964

fDate :

11/1/1964 12:00:00 AM

Firstpage :

530

Lastpage :

530

Keywords :

Capacitance; Charge carrier lifetime; Frequency response; Gallium arsenide; Gunn devices; Laboratories; MOS devices;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1964.15379

Filename :

1473767

Link To Document :