Title :
Monolithic 2-18 GHz matrix amplifiers
Author :
Chang, A.P. ; Niclas, K.B. ; Cantos, B.D. ; Strifler, W.A.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
The design and performance of two different monolithic 2-18-GHz matrix amplifiers are discussed. The first module, optimized for gain and return loss, yields gains of G=15.5±0.9 dB and a maximum return loss of RL=-12.0 dB. When these modules are cascaded to form a two- or three-stage amplifier, gains of G=31.4±1.4 dB and G=43.2±1.8 dB, respectively, are measured. For the second unit, designed for low noise and gain, noise figures of NF=4.15±0.85 dB and gains of G=17.1±1.25 dB are achieved
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; 15.5 to 43.2 dB; 2 to 18 GHz; 4.15 dB; MESFET circuits; MMIC; SHF; matrix amplifiers; monolithic microwave IC; return loss; three-stage amplifier; two-stage amplifiers; Circuit noise; Distributed parameter circuits; Gain measurement; MESFETs; Noise figure; Noise measurement; Power transmission lines; Resistors; Substrates; Transmission line matrix methods;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
