Monolithic GaAs p-i-n diode switch circuits for high-power millimeter-wave applications

Author

Bellantoni, J.V. ; Bartle, D.C. ; Payne, D. ; McDermott, G. ; Bandla, S. ; Tayrani, R. ; Raffaelli, L.

Author_Institution

Alpha Ind., Woburn, MA, USA

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2162

Lastpage

2165

Abstract

Two different Ka-band single-pole, double-throw (SPDT) switch circuits using monolithic GaAs epitaxial p-i-n diode technology are presented. The lowest insertion loss is 0.7 dB at 35 GHz, and isolation is better than 32 dB from 30 to 40 GHz. The power-handling capability is at least +38 dBm pulsed and +35 dBm continuous wave. Switching speed rise- and fall times are 2 ns

Keywords

III-V semiconductors; MMIC; gallium arsenide; p-i-n diodes; semiconductor switches; switching circuits; 0.7 dB; 30 to 40 GHz; EHF; GaAs; III-V semiconductors; Ka-band; MM-wave device; MMIC; SPDT; double-throw; epitaxial PIN diode technology; fall times; high-power; insertion loss; millimeter-wave applications; p-i-n diode switch circuits; power-handling capability; single-pole; switching speed-rise time; Gallium arsenide; Millimeter wave circuits; Millimeter wave radar; Millimeter wave technology; Optical amplifiers; P-i-n diodes; Radio frequency; Switches; Switching circuits; Transmission line matrix methods;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44137

Filename

44137