DocumentCode :
1022878
Title :
Surface conductance, surface capacitance, and surface controlled junction properties of some silicon insulated gate field effect devices
Author :
Logan, Jeremy S.
Volume :
11
Issue :
11
fYear :
1964
fDate :
11/1/1964 12:00:00 AM
Firstpage :
532
Lastpage :
532
Keywords :
Capacitance; Frequency; Insulation; Laboratories; Magnetic fields; Plasma density; Plasma devices; Plasma properties; Plasma waves; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15396
Filename :
1473784
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1022878