Title :
Effect of the notch on opto-electrical characteristics of abrupt heterojunctions
Author :
Agusta, B. ; Lopez, A. ; Anderson, Richard L.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Charge carrier processes; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photoconductivity; Photonic band gap; Radiative recombination; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15402
