Title :
Properties of InAs-GaSb interface-alloy junctions
Author :
Hinkley, E.D. ; Rediker, R.H.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Charge carrier processes; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photoconductivity; Photonic band gap; Semiconductor diodes; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15404
