GaN-Based RF Power Devices and Amplifiers

Author

Mishra, Umesh K. ; Shen, Likun ; Kazior, Thomas E. ; Wu, Yi-Feng

Author_Institution

California Univ., Santa Barbara

Volume

96

Issue

2

fYear

2008

Firstpage

287

Lastpage

305

Abstract

The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; millimetre wave field effect transistors; millimetre wave power amplifiers; power transistors; GaN; MMIC designs; RF power amplifiers; RF power electronics; device epitaxial structure; gallium nitride HEMT; gallium nitride based RF power devices; gallium nitride power transistors; high electron mobility transistors; high output power density; microwave transistors; millimeter wave transistors; state-of-the-art microwave performance; state-of-the-art millimeter-wave performance; wide bandgap material; Impedance; Microwave technology; Millimeter wave technology; Photonic band gap; Power amplifiers; Power electronics; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage; Gallium nitride; High Electron Mobility Transistors (HEMTs); MMICs; microwave transistors; millimeter wave transistors; reliability;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2007.911060

Filename

4414367