Title :
GaN-Based RF Power Devices and Amplifiers
Author :
Mishra, Umesh K. ; Shen, Likun ; Kazior, Thomas E. ; Wu, Yi-Feng
Author_Institution :
California Univ., Santa Barbara
Abstract :
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; millimetre wave field effect transistors; millimetre wave power amplifiers; power transistors; GaN; MMIC designs; RF power amplifiers; RF power electronics; device epitaxial structure; gallium nitride HEMT; gallium nitride based RF power devices; gallium nitride power transistors; high electron mobility transistors; high output power density; microwave transistors; millimeter wave transistors; state-of-the-art microwave performance; state-of-the-art millimeter-wave performance; wide bandgap material; Impedance; Microwave technology; Millimeter wave technology; Photonic band gap; Power amplifiers; Power electronics; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage; Gallium nitride; High Electron Mobility Transistors (HEMTs); MMICs; microwave transistors; millimeter wave transistors; reliability;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2007.911060
