• DocumentCode
    1022970
  • Title

    P-N junctions in Mg2Ge

  • Author

    Kroemer, H. ; Kinoshita, J.

  • Volume
    11
  • Issue
    11
  • fYear
    1964
  • fDate
    11/1/1964 12:00:00 AM
  • Firstpage
    533
  • Lastpage
    533
  • Keywords
    Charge carrier processes; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photoconductivity; Photonic band gap; Radiative recombination; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1964.15405
  • Filename
    1473793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022970