DocumentCode :
1022970
Title :
P-N junctions in Mg2Ge
Author :
Kroemer, H. ; Kinoshita, J.
Volume :
11
Issue :
11
fYear :
1964
fDate :
11/1/1964 12:00:00 AM
Firstpage :
533
Lastpage :
533
Keywords :
Charge carrier processes; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photoconductivity; Photonic band gap; Radiative recombination; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15405
Filename :
1473793
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1022970
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