Title :
High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances
Author :
Kimoto, Tatsuya ; Urushidani, T. ; Kobayashi, Sota ; Matsunami, Hiroyuki
Author_Institution :
Dept. of Electr. Eng., Kyoto Univ., Japan
Abstract :
Au/6H-SiC Schottky barrier diodes with high blocking voltages were fabricated using layers grown by step-controlled epitaxy. A breakdown voltage of over 1100 V was achieved for silicon carbide (SIC) Schottky barrier diodes. These high-voltage SIC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to a T/sup 2.0/ dependence. The diodes showed good characteristics at temperatures as high as 400 degrees C.<>
Keywords :
Schottky-barrier diodes; electric breakdown of solids; gold; semiconductor epitaxial layers; semiconductor materials; semiconductor-metal boundaries; silicon compounds; solid-state rectifiers; 1100 V; 400 C; Au-SiC; Au/6H-SiC; HV rectifiers; Schottky barrier diodes; breakdown voltage; high blocking voltages; low on-resistances; step-controlled epitaxy; FETs; Gold; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
