Title :
Influence of traps on diodes
Author :
Lubart, N.D. ; Hegedus, C.L.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Capacitance; Diodes; Doping; Gold; P-n junctions; Silicon carbide; Solid modeling; Solid state circuits; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15406
