Evaluation of lateral diffusion factor in silicon from subthreshold current in short-channel vertical SIT test structure

Author

Spirito, Paolo ; Persiano, Giovanni Vito ; Strollo, Antonio G M ; Fallica, Giorgio

Author_Institution

Dept. of Electron. Eng., Naples Univ., Italy

Volume

14

Issue

12

fYear

1993

Firstpage

557

Lastpage

559

Abstract

A measurement method for the evaluation of the lateral diffusion factor of deep implanted regions in lightly doped material is proposed. The method is based on measurements of the subthreshold current versus drain voltage in vertical static induction transistor (SIT) devices. The subthreshold current is very sensitive to SIT channel width and hence to lateral diffusion of the gate regions, as shown by two-dimensional numerical analysis. Experimental results obtained for test structures fabricated with different boron doses and the same drive-in treatment indicate a lateral diffusion factor of 64% for a typical drive-in process.<>

Keywords

boron; diffusion in solids; electric variables measurement; elemental semiconductors; field effect transistors; power transistors; semiconductor device testing; silicon; B doses; SIT channel width; Si device; Si:B; deep implanted regions; drain voltage; lateral diffusion factor; lightly doped material; measurement method; short-channel vertical SIT test structure; static induction transistor; subthreshold current; Current measurement; Doping profiles; Electrical resistance measurement; Insulated gate bipolar transistors; Materials testing; Silicon; Subthreshold current; Surface resistance; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.260788

Filename

260788