مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1023015

Title :

Noise in MOS devices

Author :

Jordan, A.G.

Volume :

Issue :

fYear :

1964

fDate :

11/1/1964 12:00:00 AM

Firstpage :

534

Lastpage :

534

Keywords :

Diodes; Electrons; Fluctuations; Frequency; Low-frequency noise; MOS devices; P-n junctions; Solid state circuits; Temperature; Tunneling;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1964.15410

Filename :

1473798

Link To Document :