Title :
Oxynitride gate dielectrics for p/sup +/-polysilicon gate MOS devices
Author :
Joshi, A.B. ; Ahn, J. ; Kwong, D.L.
Author_Institution :
Rockwell Int. Corp., Newport Beach, CA, USA
Abstract :
Different oxynitride gate dielectrics (NH/sub 3/-nitrided, reoxidized NH/sub 3/-nitrided, N/sub 2/-annealed NH/sub 3/-nitrided, and N/sub 2/O grown oxides) are investigated for use in p/sup +/-polysilicon gate MOS devices. The comparison is based on flatband voltage shift as well as decrease in inversion capacitance. Results show that NH/sub 3/-nitrided and N/sub 2/-annealed NH/sub 3/-nitrided oxides best suppress the boron penetration and, consequently, these two undesirable effects. These findings are explained on the basis of the distribution of nitrogen in various oxynitride dielectrics.<>
Keywords :
capacitance; dielectric thin films; elemental semiconductors; insulated gate field effect transistors; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; silicon; B penetration; MOS devices; N distribution; N/sub 2/; N/sub 2/-annealed NH/sub 3/-nitrided oxides; N/sub 2/O; N/sub 2/O grown oxides; NH/sub 3/; NH/sub 3/-nitrided oxides; ONO films; Si:B; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; flatband voltage shift; inversion capacitance; oxynitride gate dielectrics; p/sup +/-polysilicon gate; polycrystalline Si; reoxidized NH/sub 3/-nitrided oxides; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Capacitors; Dielectric devices; Dielectric substrates; MOS devices; Microelectronics; Voltage;
Journal_Title :
Electron Device Letters, IEEE
