DocumentCode

1023047

Title

Gallium arsenide MOS and field-effect transistors

Author

Hall, Rick ; White, Jonathan

Volume

11

Issue

11

fYear

1964

fDate

11/1/1964 12:00:00 AM

Firstpage

535

Lastpage

535

Keywords

FETs; Fabrication; Frequency; Gallium arsenide; Insulation; Interface states; Silicon compounds; Tin; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1964.15413

Filename

1473801