DocumentCode
1023074
Title
High-power 60 GHz monolithic GaAs impatt diodes
Author
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
22
Issue
10
fYear
1986
Firstpage
562
Lastpage
563
Abstract
Monolithic GaAs impatt diodes were developed as CW power sources at 60 GHz using double-drift flat-profile structures prepared by MBE. Two mesa-type diodes were employed to excite a microstrip resonator produced on the same chip as the diodes. The oscillation frequency was determined by the microstrip dimensions and the diode locations rather than by external circuitry 1.2 W was obtained at 60 GHz with 8.5% efficiency, and a maximum efficiency of 10% was obtained at 58.5 GHz with 1.1 W output power without the use of diamond heat sinks.
Keywords
III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; molecular beam epitaxial growth; 1.2 W output power; 60 GHz; CW power sources; EMF; GaAs; III-V semiconductors; IMPATT diodes; MBE; MIC; MM-wave devices; diamond heat sinks; double-drift flat-profile structures; mesa-type diodes; microstrip resonator; microwave IC; millimetre-wave operation; solid-state microwave devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860383
Filename
4256578
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