Title :
Noise measurements at microwave frequencies in an InSb photoconductive optical detector
fDate :
11/1/1964 12:00:00 AM
Keywords :
FETs; Insulation; Interface states; Microwave frequencies; Noise measurement; Optical detectors; Photoconductivity; Silicon compounds; Tin; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15416
