A W-band subharmonically pumped monolithic GaAs-based HEMT gate mixer

Author

Yuh-Jing Hwang ; Huei Wang ; Tah-Hsiung Chu

Author_Institution

Graduate Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

14

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

313

Lastpage

315

Abstract

A W-band high electron mobility transistor (HEMT) subharmonically pumped (SHP) gate mixer is designed with fixed LO frequency operation. it is fabricated on a 4-mil substrate using 0.15-μm GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. the on-wafer measurement results show that the best conversion loss is about 4.7 dB in the W-band, as a 11-dbm 42-GHz low observable (LO) signal is pumped. To our knowledge, this is the first result on low conversion-loss W-band MMIC SHP HEMT gate mixer.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; 0.15 micron; 42 GHz; GaAs; GaAs-based HEMT gate mixer; W-band; fixed LO frequency; high electron mobility transistor; low observable signal; monolithic HEMT gate mixer; monolithic microwave integrated circuit; subharmonically pumped gate mixer; Frequency conversion; Gallium arsenide; HEMTs; MMICs; MODFETs; Microwave integrated circuits; Mixers; Monolithic integrated circuits; PHEMTs; Signal design;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.829256

Filename

1309679