• DocumentCode
    1023172
  • Title

    High-frequency noise of InyGa1-yAs/AlxGa1-xAs MODFETs and comparison to GaAs/AlxGa1-xAs MODFETs

  • Author

    Morko¿¿, H. ; Henderson, Tim ; Kopp, W. ; Peng, C.K.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA
  • Volume
    22
  • Issue
    11
  • fYear
    1986
  • Firstpage
    578
  • Lastpage
    580
  • Abstract
    Noise parameter measurements for recently developed 1 μm gate InyGa1-yAs/Al0.15Ga0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small Cgs//gm ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; GaAs/AlxGa1-xAs MODFETs; InyGa1-yAs/AlxGa1-xAs MODFETs; cryogenic temperatures; frequency 8 GHz; high frequency noise; noise figures; room temperature; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860393
  • Filename
    4256589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023172