Title :
High-frequency noise of InyGa1-yAs/AlxGa1-xAs MODFETs and comparison to GaAs/AlxGa1-xAs MODFETs
Author :
Morko¿¿, H. ; Henderson, Tim ; Kopp, W. ; Peng, C.K.
Author_Institution :
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA
Abstract :
Noise parameter measurements for recently developed 1 μm gate InyGa1-yAs/Al0.15Ga0.85As MODFETs have been performed at 8 GHz at room and cryogenic temperatures. Owing to the relatively small Cgs//gm ratio in these devices compared to identical conventional GaAs/AlGaAs MODFETs, both room- and cryogenic temperature noise figures have been reduced. In addition, the light sensitivity and drift in noise figure at cryogenic temperatures observed in conventional GaAs/AlGaAs MODFETs have been sub stantially reduced.
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; GaAs/AlxGa1-xAs MODFETs; InyGa1-yAs/AlxGa1-xAs MODFETs; cryogenic temperatures; frequency 8 GHz; high frequency noise; noise figures; room temperature; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860393
