Title :
GaAs diode amplification of oxygen laser line
Author :
Kim, C.S. ; Vuilleumier, R. ; Smith, J.M.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Annealing; Charge carrier processes; Conductivity; Crystals; Current-voltage characteristics; Diodes; Electron emission; Gallium arsenide; Luminescence; Tellurium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15426