• DocumentCode
    1023204
  • Title

    Very low-threshold (0.8 kA/cm2)InGaAsP/InP DH 1.5 ¿m lasers grown by atmospheric MOVPE

  • Author

    Devlin, W.J. ; Sidhu, J. ; Cole, S. ; Harlow, M. ; Westbrook, L.D. ; Nelson, A.W. ; Regnault, J.C.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    22
  • Issue
    11
  • fYear
    1986
  • Firstpage
    584
  • Lastpage
    585
  • Abstract
    Broad-area lasers have been fabricated from five separate atmospheric MOVPE DH wafers. Good agreement is found with expected theoretical predictions of the threshold/length and active-layer thickness dependences. The FWHM of the radiation in the plane perpendicular to the junction is well described by published values of active and cladding refractive indices.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; DH lasers; InGaAsP/InP; active layer refractive index; atmospheric MOVPE; cladding refractive indices; semiconductor lasers; semiconductors; threshold; wavelength 1.5 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860397
  • Filename
    4256593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023204