Title :
Very low-threshold (0.8 kA/cm2)InGaAsP/InP DH 1.5 ¿m lasers grown by atmospheric MOVPE
Author :
Devlin, W.J. ; Sidhu, J. ; Cole, S. ; Harlow, M. ; Westbrook, L.D. ; Nelson, A.W. ; Regnault, J.C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Broad-area lasers have been fabricated from five separate atmospheric MOVPE DH wafers. Good agreement is found with expected theoretical predictions of the threshold/length and active-layer thickness dependences. The FWHM of the radiation in the plane perpendicular to the junction is well described by published values of active and cladding refractive indices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; DH lasers; InGaAsP/InP; active layer refractive index; atmospheric MOVPE; cladding refractive indices; semiconductor lasers; semiconductors; threshold; wavelength 1.5 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860397
